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Electrostatic Chuck&Controller
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Electrostatic Chuck
Electrostatic Chuck
Electrostatic Chuck
Features

  • Coulomb's Law or Gradient Force electrostatic chuck  
  • Support Bi-polar, multi-polar electrode, interdigitated electrode design etc.
  • Suitable for UHV environments up to 10-⁵ Pa 
  • High clamping force
  • Typical global flatness: 2μm PV (D = 300 mm)
  • Flexible surface pattern design
  • Suitable for non-magnetic environment
  • Adsorption objects include wafer, dielectric material such as sapphire, glass and more.

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Applications
  • Wafer Metrology: EBI, CD-SEM, Review-SEM
  • Wafer Fabrication: E-Beam Lithography
  • Thin Film Deposition (CVD, PVD etc.)
  • Ion Implanter etc.
Description

Electrostatic chuck (ESC) is a silicon wafer clamping tool used in semiconductor processes. Based on the principle of electrostatic adhesion, ESC applies external high voltage to generate Coulomb adhesion force or J-R adhesion force to clamp the silicon wafer.

 

Interface Definition

General dimension,Unit:mm

Technical Specifications
<<<Swipe left to see more parameters

Item

 

6inch ESC

8inch ESC

12inch ESC

Electrostatic type

 

Coulombic or Gradient

Coulombic or Gradient

Coulombic or Gradient

Number of electrodes

 

Bi-polar

Bi-polar

Bi-polar

Accuracy

 

 

 

 

Global flatness

μm

<1

<1

<2

Parallelism

μm

<5

<5

<5

Electrical properties

 

 

 

 

Standard clamping voltage

V

1000

1000

1000

Leakage current

nA

<5

<5

<5

Performance parameter

 

 

 

 

Clamping force

N

≥10 (Coulomb)

≥16(Coulomb)

≥40(Coulomb)

Dimensions

 

 

 

 

Diameter

mm

144

194

294

Thickness

mm

12.6

12.6

12.6

*Customized requirements accepted

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